Title :
Monte Carlo studies of hot electron transport in insulating films with nanocavities
Author :
Ying Sun ; Boggs, S.A. ; Ramprasad, Ramamurthy
Author_Institution :
Inst. of Mater. Sci., Univ. of Connecticut, Storrs, CT, USA
fDate :
June 30 2013-July 4 2013
Abstract :
The problem of hot electron transport and energy loss at high electric fields in insulators is of considerable interest in considering dielectric breakdown and hot carrier related degradation. A Monte Carlo (MC) simulation provides the basis for a study of hot electron transport in thin polyethylene (PE) films at high electric fields based on energy loss to phonons computed using parameter-free, first principles computational quantum mechanics. The electron trajectories, probability densities, and spatial evolution of the electron energy distribution are presented. The electrons with energy greater than the bandgap (8.8eV) trigger impact ionization, which can lead to avalanche breakdown, while electrons with energy larger than 3-4eV can cause degradation of the dielectric. The effect of nanometer scale cavities is also investigated.
Keywords :
Monte Carlo methods; ab initio calculations; avalanche breakdown; dielectric thin films; hot carriers; impact ionisation; insulating thin films; polymer films; quantum theory; Monte Carlo simulation; avalanche breakdown; dielectric breakdown; dielectric degradation; electric fields; electron energy distribution; electron trajectories; energy loss problem; hot carrier related degradation; hot electron transport problem; impact ionization; insulating films; nanometer scale cavity effect; parameter-free first principle computational quantum mechanics; probability densities; spatial evolution; thin polyethylene films; Cavity resonators; Electric breakdown; Electric fields; Energy loss; Films; Phonons; Scattering; Hot electron; Monte Carlo; Nanocavities; Phonon;
Conference_Titel :
Solid Dielectrics (ICSD), 2013 IEEE International Conference on
Conference_Location :
Bologna
Print_ISBN :
978-1-4799-0807-3
DOI :
10.1109/ICSD.2013.6619666