Introductory ultra-low-voltage electronics

Author

Galup-Montoro, Carlos ; Schneider, M.C. ; de Carli, L.G. ; Machado, M.B.

fYear

2013

fDate

15-16 Aug. 2013

Firstpage

1

Lastpage

8

Abstract

This paper presents the fundamentals for the design of MOS analog and digital circuits that can operate at very low supply voltages. Operation of the MOS transistor in the triode region is highlighted owing to the limited voltages available. Special attention has been given to the properties of the zero-VT transistor due to its high drive capability at low voltages. Ultra-low-voltage rectifiers using diodes or diode-connected MOSFETs operating in weak inversion are analyzed. The basic amplifiers and logic gates operating at ultra-low-voltage are then reviewed. Finally, simulation and measurement results for inductive-load oscillator prototypes built in 130 nm technology demonstrate that the oscillators can operate at supply voltages of the order of the thermal voltage kT/q.

Keywords

CMOS analogue integrated circuits; CMOS digital integrated circuits; MOSFET; integrated circuit design; low-power electronics; oscillators; zero voltage switching; MOS analog circuits; MOS transistor; digital circuits; diode-connected MOSFET; inductive-load oscillator prototypes; size 130 nm; triode region; ultralow-voltage rectifiers; very low supply voltages; weak inversion; zero-VT transistor; CMOS integrated circuits; Logic gates; MOSFET; Oscillators; Rectifiers; Threshold voltage; MOSFET ultra-low-voltage circuits; energy harvesting; ultra-low-voltage Colpitts oscillator; ultra-low-voltage rectifier circuits; zero-VT transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro-Nanoelectronics, Technology and Applications (EAMTA), 2013 7th Argentine School of

Conference_Location

Buenos Aires

Type

conf

Filename

6621069