• DocumentCode
    640413
  • Title

    Ionizing radiation differential sensor based on thick gate oxide MOS transistors

  • Author

    Carra, M.J. ; Inza, M. A. Garcia ; Lipovetzky, J. ; Carbonetto, S. ; Redin, E. ; Salomone, L. Sambuco ; Faigon, A.

  • fYear
    2013
  • fDate
    15-16 Aug. 2013
  • Firstpage
    49
  • Lastpage
    54
  • Abstract
    This work presents a differential MOS circuit for ionizing radiation dose estimation. Thick gate oxide n-MOS transistors are used as the sensing pair, with p-MOS load to enhance the radiation response. The circuit is analyzed and tested under gamma (60Co) radiation. Results show a radiation sensitivity increase up to 8 V/Gy and an improved thermal drift rejection ratio in comparison with a single n-MOS dosimeter.
  • Keywords
    MOSFET circuits; circuit testing; dosimeters; gamma-ray detection; circuit testing; differential MOS circuit; gamma radiation; ionizing radiation dose estimation; p-MOS; radiation differential sensor ionization; radiation response enhancement; radiation sensitivity; thermal drift rejection ratio; thick gate oxide n-MOS transistor; Logic gates; Mirrors; Radiation effects; Sensitivity; Temperature sensors; Threshold voltage; Transistors; Dosimeter; Gamma radiation; MOS;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro-Nanoelectronics, Technology and Applications (EAMTA), 2013 7th Argentine School of
  • Conference_Location
    Buenos Aires
  • Type

    conf

  • Filename
    6621077
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=640413