Dependency of arabidopsis thaliana growth on DC electric field intensity

Author

Okumura, Takashi ; Muramoto, Yoshifumi ; Shimizu, N.

Author_Institution

Dept. of Electr. & Electron. Eng., Meijo Univ., Nagoya, Japan

Volume

21

Issue

2

fYear

2014

fDate

Apr-14

Firstpage

913

Lastpage

917

Abstract

In this paper, the dependency of Arabidopsis thaliana growth on dc field intensity was studied. One group of Arabidopsis thaliana seeds was cultivated under one intensity of electric field. Four values of 2.5, 5.0, 10.0 and 15.0 kV/m were chosen for applied field intensity. Applying duration was four days. Then, seed germination rate and stem length of seedling were obtained. As a result, it is shown that dc field improves seed germination rate and seedling stem length. Also, the length of seedling stem is increased with dc field up to 10.0 kV/m with comparatively high reliability by the statistical test, while above 10.0 kV/m it seems to saturate.

Keywords

bioelectric phenomena; biological effects of fields; botany; Arabidopsis thaliana growth dependency; DC electric field intensity; applied field intensity; seed germination rate; seedling; seeds; stem length; Educational institutions; Electric fields; Length measurement; Materials; Plasmas; Reliability; Zinc; Arabidopsis thaliana; Electric field; plant growth;

fLanguage

English

Journal_Title

Dielectrics and Electrical Insulation, IEEE Transactions on

Publisher

ieee

ISSN

1070-9878

Type

jour

DOI

10.1109/TDEI.2013.004085

Filename

6783087