DocumentCode :
64052
Title :
Dependency of arabidopsis thaliana growth on DC electric field intensity
Author :
Okumura, Takashi ; Muramoto, Yoshifumi ; Shimizu, N.
Author_Institution :
Dept. of Electr. & Electron. Eng., Meijo Univ., Nagoya, Japan
Volume :
21
Issue :
2
fYear :
2014
fDate :
Apr-14
Firstpage :
913
Lastpage :
917
Abstract :
In this paper, the dependency of Arabidopsis thaliana growth on dc field intensity was studied. One group of Arabidopsis thaliana seeds was cultivated under one intensity of electric field. Four values of 2.5, 5.0, 10.0 and 15.0 kV/m were chosen for applied field intensity. Applying duration was four days. Then, seed germination rate and stem length of seedling were obtained. As a result, it is shown that dc field improves seed germination rate and seedling stem length. Also, the length of seedling stem is increased with dc field up to 10.0 kV/m with comparatively high reliability by the statistical test, while above 10.0 kV/m it seems to saturate.
Keywords :
bioelectric phenomena; biological effects of fields; botany; Arabidopsis thaliana growth dependency; DC electric field intensity; applied field intensity; seed germination rate; seedling; seeds; stem length; Educational institutions; Electric fields; Length measurement; Materials; Plasmas; Reliability; Zinc; Arabidopsis thaliana; Electric field; plant growth;
fLanguage :
English
Journal_Title :
Dielectrics and Electrical Insulation, IEEE Transactions on
Publisher :
ieee
ISSN :
1070-9878
Type :
jour
DOI :
10.1109/TDEI.2013.004085
Filename :
6783087
Link To Document :
بازگشت