Bandgap-Engineered in Indium–Gallium–Oxide Ultraviolet Phototransistors

Author

Ting-Hao Chang ; Shoou-Jinn Chang ; Chiu, C.J. ; Chih-Yu Wei ; Yen-Ming Juan ; Wen-Yin Weng

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

27

Issue

8

fYear

2015

fDate

April15, 15 2015

Firstpage

915

Lastpage

918

Abstract

The electrical performance of amorphous indium gallium oxide (a-IGO) thin-film transistors applied as deep-ultraviolet (DUV) phototransistors is investigated. It was found that the bandgap of a-IGO can be engineered by altering its chemical composition. The performance of the phototransistors depended strongly on In₂O₃ content in the IGO film. When the indium content increases from 21% to 31%, the phototransistor cutoff red-shifted from 280 to 320 nm. The DUV-to-visible rejection ratio and photoresponsivity of the fabricated phototransistors were ~10⁵ and 0.18 A/W.

Keywords

III-V semiconductors; electro-optical devices; indium compounds; optical films; optical materials; phototransistors; thin film transistors; DUV-to-visible rejection ratio; IGO; IGO film; In₂O₃; a-IGO bandgap; amorphous indium gallium oxide thin-film transistors; chemical composition; deep-ultraviolet phototransistors; electrical performance; indium content; indium-gallium-oxide ultraviolet phototransistors; photoresponsivity; phototransistor cutoff; wavelength 280 nm to 320 nm; Films; Indium; Photoconductivity; Photonic band gap; Phototransistors; Radio frequency; Thin film transistors; Ga2O3; IGO; phototransistors;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2015.2400446

Filename

7041161