Title :
A low phase-noise GaAs FET/BJT voltage-controlled oscillator for microwave applications
Author :
Ulansky, V. ; Ben Suleiman, Sali F.
Author_Institution :
Dept. of Electron., Nat. Aviation Univ., Kiev, Ukraine
Abstract :
This paper presents a novel negative differential resistance (NDR) voltage-controlled oscillator (VCO) for microwave applications. The VCO circuit comprises a GaAs field-effect transistor (FET) and a bipolar junction transistor (BJT) current mirror. The VCO has an N-type I-V characteristic with controllable slope of the NDR region. The mathematical models of the I-V characteristic are developed using three the most frequently used models of GaAs FET drain current: Curtice, Statz and TOM. The designed VCO uses an n-channel GaAs metal semiconductor field effect transistor (MESFET) NE722S01 and four p-n-p bipolar junction transistors (BJTs) MRFC521. The VCO covers a frequency band between 1.233 GHz and 1.679 GHz with maximum in-band phase-noise of -146 dBc/Hz at 100-kHz offset over the tuning range. Power consumption of the VCO core is 53 mW from a 6.5 V supply. The implemented prototype of the proposed oscillator draws 4 mA from a 3.2V power supply and generates low-noise low-distortion signal.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; bipolar transistors; current mirrors; gallium arsenide; microwave field effect transistors; phase noise; power consumption; power supply circuits; voltage-controlled oscillators; BJT MRFC521; BJT current mirror; FET drain current; GaAs; MESFET NE722S01; N-type I-V characteristic; NDR region; VCO circuit; VCO core; bipolar junction transistor current mirror; controllable slope; current 4 mA; frequency 1.233 GHz to 1.679 GHz; frequency band; gallium arsenide field-effect transistor; in-band phase-noise; low phase-noise FET/BJT voltage-controlled oscillator; low-noise low-distortion signal; mathematical models; microwave applications; n-channel gallium arsenide metal semiconductor field effect transistor; negative differential resistance; p-n-p bipolar junction transistors MRFC521; power 53 mW; power consumption; power supply; voltage 3.2 V; voltage 6.5 V; Equations; Field effect transistors; Mathematical model; Microwave circuits; Mirrors; Voltage-controlled oscillators; current mirror; metal semiconductor field effect transistor; power consumption; varactor;
Conference_Titel :
Physics and Engineering of Microwaves, Millimeter and Submillimeter Waves (MSMW), 2013 International Kharkov Symposium on
Conference_Location :
Kharkiv
Print_ISBN :
978-1-4799-1066-3
DOI :
10.1109/MSMW.2013.6622100
