Title :
Terahertz diode on gallium nitride microcathode
Author :
Goncharuk, N.M. ; Karushkin, N.F. ; Malyshko, V.V. ; Orehovskiy, V.A.
Author_Institution :
State Enterprise Res. Inst. “Orion”, Kiev, Ukraine
Abstract :
A model of small-signal impedance of semiconductor transit-time diode with injection time of electron negligible less than its transit time had been developed by Sze [1]. Modification of the model with consideration of injection delay has been applied on studying of semiconductor [2] and vacuum [3] resonant-tunneling diodes impedance. We apply the modification to investigate impedance of a diode on AlGaN micro-cathode with electron field emission and transit in vacuum layer with comparable emission and transit time delays.
Keywords :
III-V semiconductors; aluminium compounds; electrochemical electrodes; electron field emission; gallium compounds; micromechanical devices; microwave diodes; nitrogen compounds; resonant tunnelling diodes; semiconductor devices; AlGaN; electron field emission; electron injection time; gallium nitride microcathode; injection delay; semiconductor resonant-tunneling diodes impedance; semiconductor transit-time diode; small-signal impedance model; terahertz diode; transit time delays; vacuum layer; vacuum resonant-tunneling diodes impedance; Delays; Electric potential; Impedance; Resistance; Resonant tunneling devices; Semiconductor diodes; Time-frequency analysis;
Conference_Titel :
Physics and Engineering of Microwaves, Millimeter and Submillimeter Waves (MSMW), 2013 International Kharkov Symposium on
Conference_Location :
Kharkiv
Print_ISBN :
978-1-4799-1066-3
DOI :
10.1109/MSMW.2013.6622200
