Title :
Fresnel formulas for electron in heterostructure
Author :
Krasnopevtsev, E.A.
Abstract :
Refraction of a ballistic electronic wave on linear border in heterostructure with two-dimensional electronic gas is considered. The border divides areas with different composition of a solid solution and differing values of effective mass, potential energy and levels of dimensional quantization. The transmission and reflection factors generalizing Fresnels formulas are received.
Keywords :
Fresnel diffraction; III-V semiconductors; aluminium compounds; ballistic transport; effective mass; gallium arsenide; refraction; solid solutions; two-dimensional electron gas; AlGaAs-GaAs; Fresnel formula; ballistic electronic wave refraction; dimensional quantization level; effective mass; electron heterostructure; potential energy; reflection factor; solid solution composition; transmission factor; two-dimensional electronic gas; Focusing; Gallium arsenide; Potential energy; Quantization (signal); Reflection; Silicon; Solids;
Conference_Titel :
Actual Problems of Electronics Instrument Engineering (APEIE), 2012 11th International Conference on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4673-2842-5
DOI :
10.1109/APEIE.2012.6628916
