DocumentCode :
642053
Title :
Pulse current trimming of polysilicon piezoresistors in pressure sensor
Author :
Polstyankin, Anton V. ; Gridchin, V.A.
fYear :
2012
fDate :
2-4 Oct. 2012
Firstpage :
15
Lastpage :
19
Abstract :
The influence of current trimming conditions on the resistance change was researched. Current trimming method may be used for the offset reduction in pressure sensor. This method may be used after chip assembling and do not requires the use of costly equipment. Samples with different dopping concentration were researched. Their behavior during pulse current trimming was variously. The practical methodology of Wheatstone bridge balancing was offer. The qualitatively description of obtained experimental results was presented.
Keywords :
assembling; piezoresistive devices; pressure sensors; pulse circuits; Wheatstone bridge balancing; chip assembling; polysilicon piezoresistors; pressure sensor; pulse current trimming; resistance change; Actuators; Bridges; Piezoresistive devices; Resistance; Resistors; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Actual Problems of Electronics Instrument Engineering (APEIE), 2012 11th International Conference on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4673-2842-5
Type :
conf
DOI :
10.1109/APEIE.2012.6628917
Filename :
6628917
Link To Document :
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