Title :
Problems of plasmachemical etching of Si related to 3D structures formation (technology of Tri-Gate nanotransistors)
Author :
Bogmolov, Boris K.
Author_Institution :
Novosibirsk State Tech. Univ., Novosibirsk, Russia
Abstract :
The results of plasmachemical CCl2F2/O2 etching of Si in a quartz reactor with teflon coating are considered. The consistent model is developed for the plasmachemical CCl2F2/O2 etching of Si in the plasma in the conditions of efficient supply of chemically active particles caused by etching of the teflon. The Si etching depth was 180 μm after 30 min.
Keywords :
coatings; nanoelectronics; quartz; silicon; sputter etching; 3D structures formation; CCl2F2-O2; Si; chemically active particles; plasmachemical etching; quartz reactor; silicon etching depth; teflon coating; tri-gate nanotransistors; Coatings; Educational institutions; Etching; Inductors; Postal services; Silicon; Three-dimensional displays;
Conference_Titel :
Actual Problems of Electronics Instrument Engineering (APEIE), 2012 11th International Conference on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4673-2842-5
DOI :
10.1109/APEIE.2012.6628921
