DocumentCode :
642061
Title :
Creation of tunnel junction with scanning probe lithography
Author :
Pavlova, Anastasia Yu ; Khivintsev, Yurii V. ; Filimonov, Yuri A. ; Tiercelin, Nicolas ; Pernod, Philippe
Author_Institution :
Saratov State Tech. Univ., Saratov, Russia
fYear :
2012
fDate :
2-4 Oct. 2012
Firstpage :
111
Lastpage :
113
Abstract :
Atomic force microscope was used to create nanosized oxide line crossing over the whole width a nickel oxide film based microstructure. The created structure revealed tunnel barrier type I-V characteristics.
Keywords :
atomic force microscopy; lithography; nanoelectronics; nanostructured materials; nickel compounds; tunnelling; atomic force microscope; nanosized oxide line; nickel oxide film based microstructure; scanning probe lithography; tunnel barrier type I-V characteristics; tunnel junction; Atomic force microscopy; Films; Force; Lithography; Probes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Actual Problems of Electronics Instrument Engineering (APEIE), 2012 11th International Conference on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4673-2842-5
Type :
conf
DOI :
10.1109/APEIE.2012.6628942
Filename :
6628942
Link To Document :
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