Title :
Designing MW transistor model
Author_Institution :
Siberian State Univ. for Telecommun. & Inf., Novosibirsk, Russia
Abstract :
Results of designing MW transistor model are presented. Designing is based on measurement of S parameters for cutoff mode and operating point.
Keywords :
S-parameters; microwave transistors; semiconductor device models; MW transistor model; S parameter measurement; cutoff mode; operating point; Integrated circuit modeling; Microwave FETs; Microwave amplifiers; Microwave circuits;
Conference_Titel :
Actual Problems of Electronics Instrument Engineering (APEIE), 2012 11th International Conference on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4673-2842-5
DOI :
10.1109/APEIE.2012.6628965
