Title :
Table of contents and programme
Abstract :
The following topics are dealt with: reliability; process simulation; compact models; interconnects; nanowires; FinFET; Monte Carlo transport; TCAD; random-access memories; and quantum transport.
Keywords :
MOSFET; Monte Carlo methods; integrated circuit interconnections; nanowires; random-access storage; semiconductor device models; semiconductor process modelling; technology CAD (electronics); FinFET; Monte Carlo transport; TCAD; compact models; interconnects; nanowires; process simulation; quantum transport; random-access memories; reliability;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on
Conference_Location :
Glasgow
Print_ISBN :
978-1-4673-5733-3
DOI :
10.1109/SISPAD.2013.6650558
