A study of RF oscillator reliability in nanoscale CMOS

Author

Babaie, Masoud ; Staszewski, Robert Bogdan

Author_Institution

Delft Univ. of Technol., Delft, Netherlands

fYear

2013

fDate

8-12 Sept. 2013

Firstpage

1

Lastpage

4

Abstract

In this paper, we investigate the nature of oxide breakdown and stress-related degradation mechanisms in MOS transistors. The MOS breakdown time is quantified based on exponential-law and defect-generation models versus the oxide-thickness, gate area, temperature and voltage stress at a given cumulative failure. As a consequence, a design guide is presented to estimate the time dependent dielectric breakdown of any analog circuit. Based on reliability analysis, the lifetime of the recently introduced class-F oscillator is evaluated for both thin and thick oxide options in TSMC 65-nm CMOS process.

Keywords

CMOS analogue integrated circuits; electric breakdown; failure analysis; integrated circuit design; integrated circuit reliability; negative bias temperature instability; radiofrequency oscillators; MOS transistor; RF oscillator reliability; analog circuit; cumulative failure; defect generation model; design guide; exponential law model; gate area; nanoscale CMOS; oxide breakdown mechanism; oxide thickness; size 65 nm; stress related degradation mechanism; temperature effect; time dependent dielectric breakdown; voltage stress; CMOS integrated circuits; Degradation; Electric breakdown; Logic gates; Oscillators; Reliability; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuit Theory and Design (ECCTD), 2013 European Conference on

Conference_Location

Dresden

Type

conf

DOI

10.1109/ECCTD.2013.6662205

Filename

6662205