Analysis of the mutual inductive and capacitive connections and tolerances of memristors parameters of a memristor memory matrix

In this paper the mutual inductive and capacitive connections and tolerances of memristor parameters of a memristor memory matrix are investigated. An equivalent circuit of three neighboring memristors of a memory matrix with complicated mutual capacitive and inductive connection is presented. Then the memristor´s own parasitic capacitance and inductance are described. The mutual capacitances between the platinum rims of the memory matrix are calculated. Two possible values of the coefficient of magnetic coupling between the memristors are used. A SIMULINK model of the circuit of three neighboring memristors is developed. The simulation is made at pulse mode with 3 GHz actuating voltages. The main result is that the parasitic parameters do not strongly affect the memristor voltage drops at frequencies up to 3 GHz. However the tolerances of the memristor parameters have stronger effect on the circuit characteristics. Finally, some concluding remarks associated with the magnetic and capacitive influence between the memristors and the leakage and parasitic resistances of a memristor memory matrix are given.