Device characteristics of InAlSb/InAs and InAlSb/InAsSb HFETs

Author

Chen, P.-Y. ; Gao, Z.-Y. ; Ho, H.-C. ; Lin, Heng-Kuang ; Hsin, Yue-Ming ; Chyi, Jen-Inn

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Chungli, Taiwan

Volume

49

Issue

16

fYear

2013

fDate

Aug. 1 2013

Firstpage

1026

Lastpage

1028

Abstract

The successful fabrication of InAlSb/InAs and InAlSb/InAsSb HFETs using recessed gate technology is reported. Epitaxial growth, device fabrication and characterisation are discussed in this Letter. A comparison of the two kinds of HFETs shows that the use of Sb in the InAs channel layer can effectively reduce the gate leakage resulting from the band-to-band tunnelling. This improvement is primarily because of increased separation between the conduction band edge of the InAsSb channel layer and the valence band edge of the InAlSb top barrier layer. An InAlSb/InAsSb HFET with 2 μm gate length and 50 μm gate width shows I_D = 596 mA/mm and g_m = 1 S/mm.

Keywords

III-V semiconductors; aluminium compounds; arsenic compounds; conduction bands; high electron mobility transistors; indium compounds; tunnelling; valence bands; wide band gap semiconductors; HFET; InAlSb-InAs; InAlSb-InAsSb; band-to-band tunnelling; channel layer; conduction band edge; device characterisation; device fabrication; epitaxial growth; gate leakage reduction; recessed gate technology; size 2 mum; size 50 mum; top barrier layer; valence band edge;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el.2013.0788

Filename

6571510