A new approach for the design of class-E GaN power amplifier with high efficiency

Author

Kizilbey, Oguzhan ; Palamutcuogullari, Osman ; Yarman, Siddik Binboga

fYear

2013

fDate

2-5 Sept. 2013

Firstpage

1

Lastpage

4

Abstract

A high efficient GaN HEMT power amplifier with a new topology is presented for to be used at 3.4-3.7 GHz band. Short sections of the Microstrip-lines are used as harmonic traps at the load network in order to improve the efficiency. The fabricated GaN HEMT amplifier delivers 37.5 dBm saturated output power and the maximum power-added efficiency of 80% and a maximum drain efficiency of 83% are obtained at 3.6 GHz. These values represent the state-of-the-art performance efficiencies at S-Band.

Keywords

III-V semiconductors; gallium compounds; integrated circuit design; microstrip lines; power HEMT; power amplifiers; wide band gap semiconductors; GaN; bandwidth 3.4 GHz to 3.7 GHz; class E power amplifier; efficiency 80 percent; efficiency 83 percent; frequency 3.6 GHz; harmonic traps; high efficient HEMT power amplifier; load network; microstrip lines; Gallium nitride; HEMTs; Harmonic analysis; Impedance; Power amplifiers; Topology; Class-E power amplifier (PA); Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT); harmonic termination; power-added efficiency (PAE); switching-mode amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium (MMS), 2013 13th Mediterranean

Conference_Location

Saida

Type

conf

DOI

10.1109/MMS.2013.6663076

Filename

6663076