• DocumentCode
    643246
  • Title

    An input amplitude modulated harmonic outphasing PA

  • Author

    Abou-Chahine, Zeid ; Felgentreff, Tilman ; Fischer, Georg ; Weigel, Robert

  • Author_Institution
    RF Technol., Nokia Siemens Networks GmbH, Ulm, Germany
  • fYear
    2013
  • fDate
    2-5 Sept. 2013
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In this paper, an outphasing power amplifier (PA) made using 2×30W GaN HEMTs and operated in deep class-C bias is presented. The design methodology along with some practical design aspects is also considered. The paper reports a working novel operational concept of outphasing with unmatched combiner, showing a potential to deliver more than 40% drain efficiency at 10 dB Power Back Off (PBO).
  • Keywords
    III-V semiconductors; gallium compounds; high electron mobility transistors; integrated circuit design; power amplifiers; power combiners; radiofrequency amplifiers; wide band gap semiconductors; GaN; HEMT; deep class C bias; input amplitude modulated harmonic outphasing PA; power 30 W; power amplifier; power back off; unmatched combiner; Current measurement; Harmonic analysis; Impedance; Modulation; Power amplifiers; Radio frequency; Transistors; Base stations; load modulation; outphasing architecture; power combining; radiofrequency (RF) amplifiers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium (MMS), 2013 13th Mediterranean
  • Conference_Location
    Saida
  • Type

    conf

  • DOI
    10.1109/MMS.2013.6663082
  • Filename
    6663082
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=643246