A 3GHz low power, MOS varactor voltage controlled oscillator for implantable ultra wideband applications in CMOS Silicon-On-Sapphire (SOS) process

Author

Iji, Ayobami ; Xie Zhu ; Heimlich, Michael

fYear

2013

fDate

15-18 Sept. 2013

Firstpage

278

Lastpage

281

Abstract

For transceiver design in low cost CMOS technologies, one of the most challenging elements is the voltage controlled oscillator (VCO), especially if designed for low power. A VCO has been designed and measured where a MOS transistor is used as a varactor, as part of strategy to obtain the wide tuning range of 500MHz. Phase noise was measured and found to be -111dBc/Hz at 1MHz offset at an oscillation frequency of 3.2GHz. The VCO, implemented in 0.25μm Silicon on Sapphire (SOS) CMOS, consumes 600μW of DC power from a 1.2V source and is suitable for implantable UWB applications.

Keywords

CMOS integrated circuits; MMIC oscillators; MOSFET; circuit tuning; low-power electronics; microwave field effect transistors; silicon-on-insulator; varactors; voltage-controlled oscillators; CMOS silicon-on-sapphire process; MOS transistor; MOS varactor; Si-Al₂O₃; VCO; frequency 3.2 GHz; implantable ultra wideband applications; low power oscillator; oscillation frequency; phase noise; power 600 muW; size 0.25 mum; transceiver design; voltage controlled oscillator; wide tuning range; Frequency measurement; Phase noise; Power measurement; Tuning; Varactors; Voltage-controlled oscillators; LC VCO; Low DC power; MOS varactor; SOS; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultra-Wideband (ICUWB), 2013 IEEE International Conference on

Conference_Location

Sydney, NSW

ISSN

2162-6588

Type

conf

DOI

10.1109/ICUWB.2013.6663862

Filename

6663862