DocumentCode :
64392
Title :
Fundamental Conductance (\\div ) Voltage Limit in Low Voltage Tunnel Switches
Author :
Agarwal, Sankalp ; Yablonovitch, Eli
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of California at Berkeley, Berkeley, CA, USA
Volume :
35
Issue :
10
fYear :
2014
fDate :
Oct. 2014
Firstpage :
1061
Lastpage :
1062
Abstract :
There is a fundamental conductance ÷ voltage limit in low voltage (<;4kbT/q) tunneling switches that turn off by relying upon the band edges to cutoff the available density of states. The Fermi occupation probabilities are thermally broadened by 4kbT. However, current is only allowed to flow in a narrow energy range limited by the applied voltage, V. This means that if a voltage less than 4kbT/q is applied, the conductance will be reduced by at least qV/4kbT. Even with a perfect tunneling probability of 1 in a perfect quantum channel, the conductance quantum would be diminished by qV/4kbT. Attempts at lowering the operating voltage below <;4kbT/q must come at the expense of smaller conductance.
Keywords :
probability; switches; Fermi occupation probability; density of states; fundamental conductance quantum; low voltage tunneling switch; perfect quantum channel; perfect tunneling probability; voltage limit; Field effect transistors; Junctions; Low voltage; Switches; Tunneling; Voltage control; Tunneling field effect transistor (TFET); density of states; energy filtering; thermal broadening; tunneling;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2014.2350434
Filename :
6895245
Link To Document :
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