DocumentCode
64392
Title
Fundamental Conductance
Voltage Limit in Low Voltage Tunnel Switches
Author
Agarwal, Sankalp ; Yablonovitch, Eli
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Univ. of California at Berkeley, Berkeley, CA, USA
Volume
35
Issue
10
fYear
2014
fDate
Oct. 2014
Firstpage
1061
Lastpage
1062
Abstract
There is a fundamental conductance ÷ voltage limit in low voltage (<;4kbT/q) tunneling switches that turn off by relying upon the band edges to cutoff the available density of states. The Fermi occupation probabilities are thermally broadened by 4kbT. However, current is only allowed to flow in a narrow energy range limited by the applied voltage, V. This means that if a voltage less than 4kbT/q is applied, the conductance will be reduced by at least qV/4kbT. Even with a perfect tunneling probability of 1 in a perfect quantum channel, the conductance quantum would be diminished by qV/4kbT. Attempts at lowering the operating voltage below <;4kbT/q must come at the expense of smaller conductance.
Keywords
probability; switches; Fermi occupation probability; density of states; fundamental conductance quantum; low voltage tunneling switch; perfect quantum channel; perfect tunneling probability; voltage limit; Field effect transistors; Junctions; Low voltage; Switches; Tunneling; Voltage control; Tunneling field effect transistor (TFET); density of states; energy filtering; thermal broadening; tunneling;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2014.2350434
Filename
6895245
Link To Document