Title :
A 1 V bulk-controlled gm-boosted CMOS mixer for LTE-A applications
Author :
Hung-Che Wei ; Chih-Lung Hsiao
Author_Institution :
Dept. of Electron. Commun. Eng., Nat. Kaohsiung Marine Univ., Kaohsiung, Taiwan
Abstract :
A 1 V 1.4 ~ 3.6 GHz high linearity CMOS mixer for LTE-A applications is presented. The transconductor stage of the mixer adopts bulk-controlled, gm-boosted, and current-reuse techniques to improve the conversion gain and linearity for low voltage operation. The mixer features the maximum power conversion gain of 12.3 dB, input third-order intercept point of 4.8 dBm, and the minimum single sideband noise figure of 16.9 dB. The DC supply voltage can be scaled down to 1 V with the mixer core current consumption of 4.6 mA.
Keywords :
CMOS integrated circuits; MMIC mixers; UHF mixers; field effect MMIC; low-power electronics; DC supply voltage; LTE-A applications; bulk-controlled gm-boosted CMOS mixer; conversion gain; current 4.6 mA; current-reuse techniques; frequency 1.4 GHz to 3.6 GHz; linearity; low voltage operation; transconductor stage; voltage 1 V; CMOS integrated circuits; Computer architecture; Gain; Linearity; Mixers; Noise measurement; Radio frequency;
Conference_Titel :
Consumer Electronics (GCCE), 2013 IEEE 2nd Global Conference on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4799-0890-5
DOI :
10.1109/GCCE.2013.6664811
