Title :
Metamorphic ultrafast photoconductive materials in the 1-µm wavelength region for efficient terahertz emission
Author :
Sekine, Norihiko ; Morohashi, Isao ; Akahane, Kouichi ; Hosako, Iwao
Author_Institution :
Nat. Inst. of Inf. & Commun. Technol., Tokyo, Japan
Abstract :
We have developed ultrafast photoconductive InGaAs/InAlAs structures for operation in the 1-μm wavelength region. The structures were grown metamorphically on GaAs substrates and show both an ultrafast photo-carrier lifetime and a high resistance.
Keywords :
III-V semiconductors; aluminium compounds; carrier lifetime; electric resistance; gallium arsenide; indium compounds; molecular beam epitaxial growth; photoconducting materials; semiconductor growth; terahertz waves; GaAs; GaAs substrates; InGaAs-InAlAs; efficient terahertz emission; metamorphic ultrafast photoconductive materials; ultrafast photocarrier lifetime; ultrafast photoconductive InGaAs-InAlAs structures; wavelength 1 mum; Fiber lasers; Gallium arsenide; Indium gallium arsenide; Photonic band gap; Substrates;
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013 38th International Conference on
Conference_Location :
Mainz
DOI :
10.1109/IRMMW-THz.2013.6665400
