Thermal analysis of III–V HBV diode structures on InP, GaAs, silicon and diamond substrates

Author

Malko, Aleksandra ; Tang, Aik Yean ; Vukusic, Josip ; Bryllert, Tomas ; Huan Zhao ; Stake, Jan

Author_Institution

Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Goteborg, Sweden

fYear

2013

fDate

1-6 Sept. 2013

Firstpage

1

Lastpage

2

Abstract

Thermal analysis of In_0.53Ga_0.47As and GaAs Heterostructure Barrier Varactors diodes on InP, GaAs, silicon and diamond substrates are presented. The physical dimensions of the analysed structures correspond to the dimensions of a high power integrated HBV frequency multipliers for W-band (70-110 GHz). It is shown that material transfer to substrates with higher thermal conductivities will reduce thermal resistance by 21% and approximately 50% for In_0.53Ga_0.47 As and GaAs HBVs, respectively. Thus, an enhanced thermal handling capability of the HBV multiplier sources can be obtained.

Keywords

III-V semiconductors; diamond; frequency multipliers; gallium arsenide; indium compounds; millimetre wave diodes; silicon; thermal analysis; thermal conductivity; varactors; C; GaAs; GaAs substrate; HBV multiplier sources; III-V heterostructure barrier varactor diode structures; In_0.53Ga_0.47As; InP; InP substrate; Si; W-band; diamond substrate; frequency 70 GHz to 110 GHz; high power integrated HBV frequency multipliers; material transfer; physical dimensions; silicon substrate; thermal analysis; thermal conductivities; thermal handling capability; thermal resistance; Diamonds; Gallium arsenide; Indium phosphide; Silicon; Substrates; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013 38th International Conference on

Conference_Location

Mainz

Type

conf

DOI

10.1109/IRMMW-THz.2013.6665403

Filename

6665403