DocumentCode
644437
Title
Is amplification of semiconductor plasmons possible despite carrier collisions and diffusion?
Author
Sydoruk, O.
Author_Institution
Dept. of Electr. & Electron. Eng., Imperial Coll. London, London, UK
fYear
2013
fDate
1-6 Sept. 2013
Firstpage
1
Lastpage
1
Abstract
A theoretical model is developed that takes into account the detrimental effects of carrier collisions and diffusion on the amplification of drifting plasmons reflecting from conducting boundaries. It is found that, despite collisions and diffusion, amplification is possible for realistic parameters.
Keywords
carrier lifetime; plasmonics; amplification; carrier collisions; carrier diffusion; conducting boundaries; drifting plasmons; semiconductor plasmons; Educational institutions; Optical devices; Optical reflection; Plasmons; Semiconductor device modeling; Stimulated emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013 38th International Conference on
Conference_Location
Mainz
Type
conf
DOI
10.1109/IRMMW-THz.2013.6665404
Filename
6665404
Link To Document