Terahertz photoconductive antennas at 800 nm, 1000 nm, and 1550 nm: A performance comparison

Terahertz photoconductive antennas are fabricated on low-temperature-grown GaAs, low-temperature-grown In_0.3Ga_0.7As, and beryllium (Be) doped low-temperature-grown lattice-matched In_0.53Ga_0.47As-In_0.52Al_0.48As multi-quantum wells material systems for 800 nm, 1000 nm, and 1550 nm operation wavelengths. Several narrow band and broad band antenna designs are fabricated and tested under pulse and cw excitation, and their performances in terms of signal to noise ratio, dynamic rand, and bandwidth are compared.