Title :
A G-band cascode MHEMT medium power amplifier
Author :
Campos-Roca, Y. ; Tessmann, A. ; Hurm, V. ; Massler, Hermann ; Seelmann-Eggebert, Matthias ; Leuther, A.
Author_Institution :
Escuela Politec., Univ. de Extremadura, Caceres, Spain
Abstract :
A balanced amplifier has been designed and fabricated. The monolithic millimeter-wave integrated circuit (MMIC) has been realized in a 35-nm InAlAs/InGaAs metamorphic high electron mobility transistor (mHEMT) process in grounded coplanar waveguide (GCPW) technology. It demonstrates a measured small-signal gain better than 19 dB between 180 and 200 GHz. The measured saturated output power achieves a maximum value of 10.2 dBm between 180 and 190 GHz.
Keywords :
HEMT integrated circuits; MMIC power amplifiers; coplanar waveguide components; differential amplifiers; G-band cascode mHEMT; GCPW technology; MMIC; balanced amplifier; grounded coplanar waveguide; medium power amplifier; metamorphic high electron mobility transistor; monolithic millimeter-wave integrated circuit; Gain; MMICs; Power amplifiers; Power generation; Power measurement; mHEMTs;
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013 38th International Conference on
Conference_Location :
Mainz
DOI :
10.1109/IRMMW-THz.2013.6665444
