Enhanced terahertz emission from GaAs and GaAs-MnAs nanowires

Author

Koroliov, A. ; Adomavicius, R. ; Arlauskas, A. ; Siusys, A. ; Sadowski, Jaroslaw ; Reszka, A. ; Krotkus, A.

Author_Institution

Center for Phys. Sci. & Technol., Vilnius, Lithuania

fYear

2013

fDate

1-6 Sept. 2013

Firstpage

1

Lastpage

2

Abstract

THz pulse emission from GaAs and GaAs-MnAs nanowire (NW) samples illuminated by femtosecond laser pulses has been studied. The amplitude of THz pulses emitted by nanowire samples was more than twice larger than that radiated from GaAs substrate. It was found that terahertz emissivity of NW samples rapidly decreases with increasing laser photon energy - behavior that could be explained by localized surface plasmon resonances in GaAs and GaAs-MnAs NWs. The plasmon enhanced absorption has been identified as a major factor for intense THz emission from our samples.

Keywords

III-V semiconductors; gallium arsenide; high-speed optical techniques; manganese compounds; nanowires; surface plasmon resonance; terahertz wave spectra; GaAs-MnAs; THz pulse emission; femtosecond laser pulses; laser photon energy; localized surface plasmon resonances; nanowires; terahertz emission; terahertz emissivity; Absorption; Gallium arsenide; Nanowires; Optical surface waves; Plasmons; Substrates; Surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013 38th International Conference on

Conference_Location

Mainz

Type

conf

DOI

10.1109/IRMMW-THz.2013.6665469

Filename

6665469