DocumentCode :
644535
Title :
Real-time CMOS terahertz camera employing plane-to-plane imaging with a focal-plane array of field-effect transistors
Author :
Bauer, Matthias ; Boppel, S. ; Lisauskas, Alvydas ; Krozer, V. ; Roskos, Hartmut G.
Author_Institution :
Phys. Inst., Johann Wolfgang Goethe-Univ. Frankfurt, Frankfurt am Main, Germany
fYear :
2013
fDate :
1-6 Sept. 2013
Firstpage :
1
Lastpage :
2
Abstract :
We present a terahertz camera working at 590 GHz at real-time frame-rates of 16 frames per second (fps). An array of 12×12 field-effect transistors has been fabricated in a 150-nm CMOS process and is used as the camera´s image sensor. The averaged single-pixel noise-equivalent-power is 43 pW/√Hz, the voltage single-pixel responsivity is 340 V/W. For an effective power of 104 μW distributed over the sensor area and a single-pixel integration time of 2.5 ms, a dynamic range of more than 10 dB for full-frame images at 33 Hz update rate is observed. The array, which does not yet contain integrated preamplifiers, serves as a test-bed for the development of heterodyne imaging also to be described in the presentation.
Keywords :
cameras; field effect transistors; focal planes; terahertz wave imaging; field-effect transistors; focal-plane array; plane-to-plane imaging; real-time CMOS terahertz camera; time 2.5 ms; Arrays; CMOS integrated circuits; Cameras; Image sensors; Real-time systems; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013 38th International Conference on
Conference_Location :
Mainz
Type :
conf
DOI :
10.1109/IRMMW-THz.2013.6665503
Filename :
6665503
Link To Document :
بازگشت