• DocumentCode
    644602
  • Title

    Characterization of highly doped Si with surface plasmon

  • Author

    Nazarov, Maxim M. ; Shkurinov, Alexander P. ; Garet, F. ; Coutaz, Jean-Louis

  • Author_Institution
    Inst. on Laser & Inf. Technol., Shatura, Russia
  • fYear
    2013
  • fDate
    1-6 Sept. 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We propose to measure the THz surface plasmon signal transmitted after a long distance propagation over a conductive sample in view of determining the THz properties of the sample material. We demonstrate this very sensitive method on a highly-doped silicon samples. The surface permittivity differs from the Drude model prediction.
  • Keywords
    permittivity; silicon; surface plasmons; Drude model; Si; THz surface plasmon signal; highly doped silicon; long distance propagation; surface permittivity; Dielectrics; Frequency measurement; Plasmons; Reflection; Semiconductor device measurement; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013 38th International Conference on
  • Conference_Location
    Mainz
  • Type

    conf

  • DOI
    10.1109/IRMMW-THz.2013.6665570
  • Filename
    6665570
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=644602