Title :
Optimized Tera-FET detector performance based on an analytical device model verified up to 9 THz
Author :
Boppel, S. ; Lisauskas, Alvydas ; Bauer, Matthias ; Mundt, M. ; Venckevicius, R. ; Minkevicius, L. ; Seliuta, Dalius ; Kasalynas, I. ; Khamaisi, Bassam ; Socher, Eran ; Valusis, G. ; Krozer, V. ; Roskos, Hartmut G.
Author_Institution :
Phys. Inst., Johann Wolfgang Goethe-Univ. Frankfurt, Frankfurt am Main, Germany
Abstract :
We report on an order-of-magnitude enhancement of sensitivity of CMOS-transistor-based THz detectors. At 2.54 THz, 3.13 THz and 4.25 THz, responsivity values of 336 V/W, 308 V/W, and 230 V/W and optimum noise-equivalent-power values of 63 pW/√Hz, 85 pW/√Hz, and 110 pW/√Hz are obtained.
Keywords :
CMOS integrated circuits; field effect transistors; terahertz wave detectors; CMOS-transistor-based THz detectors; analytical device model; frequency 2.54 THz; frequency 3.13 THz; frequency 4.25 THz; optimized teraFET detector performance; optimum noise-equivalent-power values; order-of-magnitude enhancement; CMOS integrated circuits; Detectors; Impedance; Performance evaluation; Plasmons; Semiconductor device modeling; Silicon;
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013 38th International Conference on
Conference_Location :
Mainz
DOI :
10.1109/IRMMW-THz.2013.6665574
