Fabrication and characterization of InAs/GaSb strained layer superlattice infrared focal plane array detectors

Author

Jianxin Chen ; Li Quan ; Zhicheng Xu ; Yi Zhou ; Jiajia Xu ; Ruijun Ding ; Li He

Author_Institution

Key Lab. of Infrared Imaging Mater. & Detectors, Shanghai Inst. of Tech. Phys., Shanghai, China

fYear

2013

fDate

1-6 Sept. 2013

Firstpage

1

Lastpage

2

Abstract

We report the fabrication and characterization of high performance superlattice infrared photodetectors. The single-element detectors have 50% cutoff wavelengths of 5.2 μm and 8.0μm with related R₀A of 7.5×10⁴O·cm² and 110Ωcm², respectively at 77K. The focal plane arrays with cutoff wavelength of 5.2μm and format of 128×128, showed a noise equivalent differential temperature 33.4mK at 80K. Fabrication of long wavelength FPA is under way.

Keywords

III-V semiconductors; focal planes; gallium compounds; indium compounds; infrared detectors; photodetectors; semiconductor growth; semiconductor superlattices; InAs-GaSb; InAs-GaSb strained layer superlattice infrared focal plane array detector characterization; InAs-GaSb strained layer superlattice infrared focal plane array detector fabrication; cutoff wavelengths; high performance superlattice infrared photodetector characterization; high performance superlattice infrared photodetector fabrication; long wavelength focal plane array fabrication; noise equivalent differential temperature; single-element detectors; temperature 77 K; temperature 80 K; wavelength 5.2 mum; wavelength 8 mum; Arrays; Dark current; Detectors; Fabrication; Photodiodes; Superlattices;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013 38th International Conference on

Conference_Location

Mainz

Type

conf

DOI

10.1109/IRMMW-THz.2013.6665577

Filename

6665577