Title :
Highly efficient Terahertz photoconductive switch at 1060nm excitation wavelength
Author :
Gerth, Christopher ; Dietz, R.J.B. ; Gobel, T. ; Schell, M. ; Brahm, A. ; Notni, G. ; Tunnermann, Andreas
Author_Institution :
Fraunhofer Inst. for Appl. Opt. & Precision Eng. (IOF), Jena, Germany
Abstract :
Broadband and sensitive Terahertz (THz) emitter and detector material is required to build cost-effective and mobile THz time-domain spectrometer systems (TDS). We present an efficient THz switch optimized for femtosecond lasers operating at the central wavelength of about 1060 nm. Performance is improved by a factor of 20 due to the implementation of mesa structuring and utilization of low temperature grown (LT) Bedoped InGaAs/InAlAs antenna material.
Keywords :
microwave switches; optical switches; photoconducting switches; InGaAs-InAlAs; TDS; THz switch; antenna materia; broadband terahertz emitter; detector material; excitation wavelength; femtosecond lasers; mesa structuring; mobile THz time domain spectrometer systems; sensitive terahertz emitter; terahertz photoconductive switch; Antenna measurements; Detectors; Fiber lasers; Materials; Power lasers; Semiconductor device measurement; Surface emitting lasers;
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013 38th International Conference on
Conference_Location :
Mainz
DOI :
10.1109/IRMMW-THz.2013.6665606
