Highly efficient Terahertz photoconductive switch at 1060nm excitation wavelength

Author

Gerth, Christopher ; Dietz, R.J.B. ; Gobel, T. ; Schell, M. ; Brahm, A. ; Notni, G. ; Tunnermann, Andreas

Author_Institution

Fraunhofer Inst. for Appl. Opt. & Precision Eng. (IOF), Jena, Germany

fYear

2013

fDate

1-6 Sept. 2013

Firstpage

1

Lastpage

2

Abstract

Broadband and sensitive Terahertz (THz) emitter and detector material is required to build cost-effective and mobile THz time-domain spectrometer systems (TDS). We present an efficient THz switch optimized for femtosecond lasers operating at the central wavelength of about 1060 nm. Performance is improved by a factor of 20 due to the implementation of mesa structuring and utilization of low temperature grown (LT) Bedoped InGaAs/InAlAs antenna material.

Keywords

microwave switches; optical switches; photoconducting switches; InGaAs-InAlAs; TDS; THz switch; antenna materia; broadband terahertz emitter; detector material; excitation wavelength; femtosecond lasers; mesa structuring; mobile THz time domain spectrometer systems; sensitive terahertz emitter; terahertz photoconductive switch; Antenna measurements; Detectors; Fiber lasers; Materials; Power lasers; Semiconductor device measurement; Surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013 38th International Conference on

Conference_Location

Mainz

Type

conf

DOI

10.1109/IRMMW-THz.2013.6665606

Filename

6665606