DocumentCode
644640
Title
Bandwidth improvement of cw THz receivers by Be doping of low-temperature-grown InGaAs/InAlAs heterostructures
Author
Globisch, B. ; Stanze, D. ; Dietz, R.J.B. ; Gobel, T. ; Schell, M.
Author_Institution
Fraunhofer Inst. for Telecommun., Heinrich Hertz Inst., Berlin, Germany
fYear
2013
fDate
1-6 Sept. 2013
Firstpage
1
Lastpage
2
Abstract
LTG InGaAs/InAlAs based cw THz receivers can be fine-tuned by Be doping, which is an advantage towards their LTG GaAs counterparts. By increasing Be doping we reduce carrier trapping time, resulting in larger bandwidth. As a tradeoff, the current response is reduced.
Keywords
III-V semiconductors; aluminium compounds; beryllium; carrier lifetime; gallium arsenide; indium compounds; semiconductor doping; semiconductor heterojunctions; submillimetre wave receivers; Be doping; InGaAs-InAlAs:Be; bandwidth improvement; carrier trapping time; current response; cw THz receivers; low-temperature-grown InGaAs/InAlAs heterostructures; Charge carrier processes; Doping; Indium gallium arsenide; Optical pumping; Optical variables measurement; Receivers;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013 38th International Conference on
Conference_Location
Mainz
Type
conf
DOI
10.1109/IRMMW-THz.2013.6665609
Filename
6665609
Link To Document