DocumentCode :
644648
Title :
Terahertz imaging using InGaAs Schottky barrier diode array detectors
Author :
Sang-Pil Han ; Jeong-Woo Park ; Hyunsung Ko ; Namje Kim ; Kiwon Moon ; Young-Jong Yoon ; Wang-Joo Lee ; Won-Hee Lee ; Min Yong Jeon ; Kyung Hyun Park
Author_Institution :
THz Photonics Creative Res. Center, ETRI, Daejeon, South Korea
fYear :
2013
fDate :
1-6 Sept. 2013
Firstpage :
1
Lastpage :
2
Abstract :
We characterize InGaAs Schottky barrier diodes (SBDs) with a variation in the anode size. High-efficiency terahertz (THz) pulse detection of the InGaAs SBDs is performed in the cases of anode diameters of 2 μm and 3 μm. The uniformity of the fabricated 1 × 20 InGaAs SBD array is measured to be fine. The THz imaging results using the 1 × 20 InGaAs SBD array are presented.
Keywords :
III-V semiconductors; Schottky barriers; Schottky diodes; gallium arsenide; indium compounds; terahertz wave detectors; terahertz wave imaging; InGaAs; InGaAs SBD array; Schottky barrier diode array detector; anode size variation; size 2 mum; size 3 mum; terahertz imaging; terahertz pulse detection; Anodes; Arrays; Detectors; Imaging; Indium gallium arsenide; Lenses; Schottky diodes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013 38th International Conference on
Conference_Location :
Mainz
Type :
conf
DOI :
10.1109/IRMMW-THz.2013.6665617
Filename :
6665617
Link To Document :
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