Confinement and losses of THz Planar Goubau Lines fabricated on a thin silicon substrate

Low loss broad band transmission lines are of great interest for terahertz applications. To overcome high losses, Planar Goubau Lines (PGL) have been designed and fabricated on high resistivity silicon substrate. The measured loss level is typically 1dB/mm around 250GHz. The transitions are also extremely efficient for CPW-to-PGL conversion. The loss level depends on certain parameters such as length and width of the rectangular cross section or the thickness of the silicon substrate. The confinement of the electromagnetic wave will be also discussed particularly for different values of the strip´s width.