Title :
Responsivity at 0.27 THz of a heterostructure field effect transistor detector in a quasi-optical package
Author :
Giliberti, Valeria ; Casini, R. ; Di Gaspare, Alessandra ; Lisauskas, Alvydas ; Roskos, Hartmut G. ; Ortolani, Michele
Author_Institution :
IFN (Inst. for Photonics & Nanotechnol.), Rome, Italy
Abstract :
We have fabricated AlGaAs/InGaAs/AlGaAs heterostructure field effect transistors (HFET) with integrated on-chip antennas and we have measured their optical responsivity when mounted in a in-house developed quasi-optical package with a silicon substrate lens.
Keywords :
III-V semiconductors; aluminium compounds; electronics packaging; gallium arsenide; high electron mobility transistors; submillimetre wave antennas; submillimetre wave detectors; submillimetre wave transistors; AlGaAs-InGaAs-AlGaAs; HFET; frequency 0.27 THz; heterostructure field effect transistor detector; integrated on-chip antennas; optical responsivity; quasioptical package; silicon substrate lens; Detectors; HEMTs; Lenses; Logic gates; MODFETs; Optical coupling; Silicon;
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013 38th International Conference on
Conference_Location :
Mainz
DOI :
10.1109/IRMMW-THz.2013.6665693
