DocumentCode
644729
Title
Possibility of THz donor lasing in electrically pumped silicon
Author
Zhukavin, R.Kh. ; Tsyplenkov, V.V. ; Shastin, V.N. ; Pavlov, S.G. ; Hubers, Heinz-Wilhelm
Author_Institution
Inst. for Phys. of Microstruct., Nizhny Novgorod, Russia
fYear
2013
fDate
1-6 Sept. 2013
Firstpage
1
Lastpage
1
Abstract
A possible way to create silicon terahertz laser under electric field excitation is presented. Electrical pulses with both period and duration in nanosecond range should be applied to moderately doped stressed bulk silicon. The purpose of short pulse excitation is impurity breakdown followed by capture and population of upper lasing state. The mechanisms responsible for population inversion and losses are described.
Keywords
elemental semiconductors; optical losses; population inversion; semiconductor lasers; silicon; terahertz wave devices; Si; THz donor lasing; doped stressed bulk silicon; electric field excitation; electrical pulses; electrically pumped silicon; impurity breakdown; optical losses; population inversion; short pulse excitation; silicon terahertz laser; Laser excitation; Laser transitions; Laser tuning; Loss measurement; Pump lasers; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013 38th International Conference on
Conference_Location
Mainz
Type
conf
DOI
10.1109/IRMMW-THz.2013.6665698
Filename
6665698
Link To Document