Title :
Injection induced terahertz electroluminescence from 4H-SiC p-n-junctions under forward bias
Author :
Gupta, J.P. ; Andrainov, A.V. ; Kolodzey, J. ; Sankin, V.I. ; Zakhar´in, A.O. ; Vasil´ev, Yu.B.
Author_Institution :
Univ. of Delaware, Newark, DE, USA
Abstract :
We report on injection induced terahertz electroluminescence from SiC p-n junctions. The emission is assigned to intracenter optical transitions in shallow donors, initiated by the injection.
Keywords :
electroluminescence; p-n junctions; semiconductor diodes; silicon compounds; terahertz wave devices; terahertz wave spectra; wide band gap semiconductors; SiC; forward bias; injection induced terahertz electroluminescence; intracenter optical transitions; p-n-junction diode; shallow donors; Electron optics; Nitrogen; Optical recording; Quantum cascade lasers; Silicon carbide; Sputtering; Substrates;
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013 38th International Conference on
Conference_Location :
Mainz
DOI :
10.1109/IRMMW-THz.2013.6665788
