DocumentCode :
644822
Title :
Probing of local electron states in Pb1−xSnxTe(In) narrow-gap semiconductors using laser terahertz radiation
Author :
Chernichkin, Vladimir ; Ryabova, Ludmila ; Nicorici, Andrey ; Danilov, Sergey ; Khokhlov, D.
Author_Institution :
M.V. Lomonosov Moscow State Univ., Moscow, Russia
fYear :
2013
fDate :
1-6 Sept. 2013
Firstpage :
1
Lastpage :
1
Abstract :
A new type of semiconductor local states is revealed in Pb1-xSnxTe(In) narrow-gap semiconductors. The energy position of these states is not linked to any specific location in the semiconductor energy spectrum, but follows the quasiFermi level position, which may be tuned by photoexcitation.
Keywords :
Fermi level; lead compounds; localised states; narrow band gap semiconductors; tellurium compounds; terahertz wave spectra; tin compounds; Pb1-xSnxTe(In); laser terahertz radiation; local electron states probing; narrow-gap semiconductors; photoexcitation; quasiFermi level; semiconductor energy spectrum; semiconductor local states; Magnetomechanical effects;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013 38th International Conference on
Conference_Location :
Mainz
Type :
conf
DOI :
10.1109/IRMMW-THz.2013.6665792
Filename :
6665792
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=644822
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