DocumentCode
644840
Title
Quantitative evaluation of the photoexcited carriers in bulk Si using optical pump-THz probe spectroscopy
Author
Yamashita, G. ; Matsubara, Eiichi ; Nagai, Masaharu ; Kanemitsu, Yoshihiko ; Ashida, M.
Author_Institution
Grad. Sch. of Eng. Sci., Osaka Univ., Toyonaka, Japan
fYear
2013
fDate
1-6 Sept. 2013
Firstpage
1
Lastpage
2
Abstract
We perform optical pump-THz probe measurements in four types of silicon samples to investigate carrier multiplication. We evaluate the number of carriers from the transient change of transmission after photoexcitad carriers are thermalized to the bottom of the conduction band to discuss the possibility of carrier multiplication.
Keywords
conduction bands; elemental semiconductors; optical pumping; silicon; terahertz wave spectra; Si; bulk Si; carrier multiplication; conduction band bottom; optical pump-terahertz probe measurements; optical pump-terahertz probe spectroscopy; photoexcited carriers; quantitative evaluation; transmission transient change; Optical pulses; Optical pumping; Optical scattering; Optical variables measurement; Photonics; Semiconductor device measurement; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013 38th International Conference on
Conference_Location
Mainz
Type
conf
DOI
10.1109/IRMMW-THz.2013.6665810
Filename
6665810
Link To Document