DocumentCode
644848
Title
Terahertz properties from the surface of strained SiGe on Si multilayered structure
Author
Omura, K. ; Nakamura, A. ; Kiwa, Toshihiko ; Yamashita, Yukihiko ; Sakai, Kenji ; Tsukada, Keiji
Author_Institution
Grad. Sch., Okayama Univ., Okayama, Japan
fYear
2013
fDate
1-6 Sept. 2013
Firstpage
1
Lastpage
2
Abstract
A Large-scale integration (LSI) has been improved by scaling contraction. Strained Si has been proposed as a higher carrier mobility than usual. We have evaluated the strained SiGe wafer by LTEM, which is a method of analyzing to detect THz waves generated by fs laser irradiated into the sample.
Keywords
Ge-Si alloys; carrier mobility; high-speed optical techniques; large scale integration; terahertz wave generation; LSI; Si; Si multilayered structure; SiGe; THz waves generation; carrier mobility; fs laser; large-scale integration; scaling contraction; strained SiGe wafer; terahertz properties; Crystals; Measurement by laser beam; Microscopy; Semiconductor device measurement; Silicon; Silicon germanium; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013 38th International Conference on
Conference_Location
Mainz
Type
conf
DOI
10.1109/IRMMW-THz.2013.6665819
Filename
6665819
Link To Document