Title :
Proposal and fabrication of resonant-tunneling-diode terahertz oscillator with structure for high frequency modulation
Author :
Minoguchi, Kyo ; Okada, Kenichi ; Suzuki, Satoshi ; Asada, Minoru
Author_Institution :
Interdiscipl. Grad. Sch. of Sci. & Eng., Tokyo Inst. of Technol., Tokyo, Japan
Abstract :
Although the direct-modulation frequency in a resonant-tunneling-diode oscillator increases by reducing the metal-insulator-metal capacitance, the output power degrades simultaneously. We figured out this mechanism using an equivalent circuit model. Based on this result, a novel structure was proposed and fabricated, and terahertz oscillation without degradation in output power was obtained.
Keywords :
MIM devices; equivalent circuits; modulation; oscillators; resonant tunnelling diodes; direct-modulation frequency; equivalent circuit; fabrication; high frequency modulation; metal-insulator-metal capacitance; resonant-tunneling-diode terahertz oscillator; Capacitance; Frequency modulation; Oscillators; Power generation; Resistance; Resonant tunneling devices;
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013 38th International Conference on
Conference_Location :
Mainz
DOI :
10.1109/IRMMW-THz.2013.6665826
