Title :
FIR photoconductivity spectra and kinetics in narrow-gap HgCdTe bulk films and HgCdTe based QW
Author :
Rumyantsev, V.V. ; Morozov, S.V. ; Antonov, A.V. ; Zholudev, M.S. ; Kudryavtsev, K.E. ; Gavrilenko, V.I. ; Dvoretskii, S.A. ; Mikhailov, N.N.
Author_Institution :
Inst. for Phys. of Microstructures, Nizhny Novgorod, Russia
Abstract :
Investigation into far infrared photoconductivity in narrow gap epitaxial bulk Hg1-xCdxTe (x<;0.2) films and Hg1-xCdxTe/CdyHg1-yTe QW structures grown by molecular beam epitaxy technique is presented. A broad band of photosensitivity in terahertz region is found at 4.2 K - 77 K. Some long-wavelength peculiarities of spectra are discovered and their origins are discussed. Lifetime studies demonstrate the possibility of radiative recombination at high excitation regime. Estimations of ampere-watt sensitivity show that some of the structures are applicable for detecting in very long-wavelength infrared range.
Keywords :
II-VI semiconductors; cadmium compounds; infrared spectra; mercury compounds; molecular beam epitaxial growth; photoconductivity; semiconductor quantum wells; semiconductor thin films; FIR photoconductivity spectra; Hg1-xCdxTe-CdyHe1-yTe; ampere-watt sensitivity; epitaxial bulk film; far infrared photoconductivity; long wavelength peculiarity; molecular beam epitaxy; narrow gap bulk film; photosensitivity; radiative recombination; temperature 4.2 K to 77 K; Charge carrier lifetime; Films; Finite impulse response filters; Kinetic theory; Magnetic fields; Photonic band gap; Temperature measurement;
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013 38th International Conference on
Conference_Location :
Mainz
DOI :
10.1109/IRMMW-THz.2013.6665835
