DocumentCode :
644891
Title :
Photosensitivity of lead telluride doped with mixed valence impurities in the terahertz spectral range
Author :
Ryabova, Ludmila ; Chernichkin, Vladimir ; Dobrovolsky, A. ; Nicorici, Andrey ; Danilov, Sergey ; Khokhlov, D.
Author_Institution :
Moscow State Univ., Moscow, Russia
fYear :
2013
fDate :
1-6 Sept. 2013
Firstpage :
1
Lastpage :
2
Abstract :
The effect of PbTe doping with In, Ga and V on photoconductive response at wavelengths up to 280 μm is studied. Mechanisms responsible for photoresponse appearance at light quant energy sufficiently lower than all characteristic energies in electronic spectrum are discussed.
Keywords :
IV-VI semiconductors; gallium; indium; lead compounds; terahertz wave spectra; valency; vanadium; PbTe:In,Ga,V; electronic spectrum; lead telluride; mixed valence impurities; photoconductive response; photoresponse appearance; photosensitivity; terahertz spectral range; Impurities; Laser excitation; Photoconductivity; Tellurium; Temperature dependence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013 38th International Conference on
Conference_Location :
Mainz
Type :
conf
DOI :
10.1109/IRMMW-THz.2013.6665862
Filename :
6665862
Link To Document :
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