DocumentCode :
644895
Title :
Probing the critical electronic properties of III–V nanowires using optical pump-terahertz probe spectroscopy
Author :
Joyce, H.J. ; Docherty, Callum J. ; Yong, Chaw-Keong ; Wong-Leung, J. ; Qiang Gao ; Paiman, S. ; Tan, H.H. ; Jagadish, C. ; Lloyd-Hughes, James ; Herz, L.M. ; Johnstona, Michael B.
Author_Institution :
Dept. of Phys., Univ. of Oxford, Oxford, UK
fYear :
2013
fDate :
1-6 Sept. 2013
Firstpage :
1
Lastpage :
2
Abstract :
Optical pump-terahertz probe spectroscopy was used to study the key electronic properties of GaAs, InAs and InP nanowires at room temperature. Of all nanowires studied, InAs nanowires exhibited the highest mobilities of 6000 cm2V-1s-1. InP nanowires featured the longest photoconductivity lifetimes and an exceptionally low surface recombination velocity of 170 cm/s.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; nanowires; optical pumping; photoconductivity; surface recombination; terahertz wave spectra; GaAs; GaAs nanowire; III-V nanowires; InAs; InAs nanowire; InP; InP nanowire; critical electronic properties; optical pump-terahertz probe spectroscopy; photoconductivity lifetimes; surface recombination velocity; temperature 293 K to 298 K; Gallium arsenide; Indium phosphide; Nanowires; Photoconductivity; Spectroscopy; Spontaneous emission; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013 38th International Conference on
Conference_Location :
Mainz
Type :
conf
DOI :
10.1109/IRMMW-THz.2013.6665866
Filename :
6665866
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=644895
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