Title :
Transient THz photoconductivity in dynamically screened InGaN/GaN quantum wells
Author :
Jin, Z. ; Lahmann, S. ; Rossow, U. ; Hangleiter, A. ; Bonn, Mischa ; Turchinovich, Dmitry
Author_Institution :
Max Planck Inst. for Polymer Res., Mainz, Germany
Abstract :
Using optical pump - THz probe spectroscopy we reveal complex ultrafast photoconductivity dynamics in InGaN/GaN quantum wells under dynamical screening conditions, where, at sufficiently high excitation densities, the photo-generated carriers fully screen the initial internal field of 3 MV/cm. The THz photoconductivity spectra contain features of both localized and free charges.
Keywords :
III-V semiconductors; gallium compounds; high-speed optical techniques; indium compounds; photoconductivity; semiconductor quantum wells; terahertz wave spectra; wide band gap semiconductors; InGaN-GaN; THz photoconductivity spectra; dynamical screening conditions; dynamically screened quantum wells; excitation density; free charges; localized charges; optical pump THz probe spectroscopy; photogenerated carriers; transient THz photoconductivity; ultrafast photoconductivity dynamics; Gallium nitride; Optical polarization; Optical pulses; Optical pumping; Photoconductivity; Ultrafast optics;
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2013 38th International Conference on
Conference_Location :
Mainz
DOI :
10.1109/IRMMW-THz.2013.6665920
