• DocumentCode
    646670
  • Title

    A low power and high conversion gain 60-GHz CMOS up-conversion mixer using current injection and dual negative resistance compensation techniques

  • Author

    Yo-Sheng Lin ; Chien-Chin Wang ; Tzung-Min Tsai ; Wei-Chen Wen

  • Author_Institution
    Dept. of Electr. Eng., Nat. Chi Nan Univ., Puli, Taiwan
  • fYear
    2013
  • fDate
    5-9 Aug. 2013
  • Firstpage
    97
  • Lastpage
    100
  • Abstract
    A 60 GHz double-balanced mixer for direct upconversion using standard 90 nm CMOS technology is reported. The up-conversion mixer comprises an enhanced double-balanced Gilbert cell with current injection for power consumption reduction, and negative resistance compensation for conversion gain (CG) enhancement, a Marchand balun for converting the single LO input signal to differential signal, and another Marchand balun for converting the differential RF output signal to single signal. The mixer consumes 8.83 mW and achieves IF-port input return loss of -12.3 dB at 0.1 GHz, LO-port input return loss of -15.4 ~ -26.7 dB and RF-port input return loss of -12.1 ~ -28.5 dB for frequencies 57~64 GHz. At IF of 0.1 GHz, the mixer achieves CG of 2 dB and LO-RF isolation of 48.8 dB at RF of 60 GHz. The corresponding 3-dB bandwidth of RF is 4.4 GHz (57.7~62.1 GHz). To the authors´ knowledge, the LO-RF isolation and power consumption are one of the best results ever reported for a 60 GHz CMOS/BiCMOS up-conversion mixer. In addition, the measured output 1-dB compression point and input third-order inter-modulation point are -10.1 dBm and -2.15 dBm, respectively, at RF of 60 GHz.
  • Keywords
    BiCMOS integrated circuits; CMOS integrated circuits; MIMIC; baluns; millimetre wave mixers; BiCMOS up-conversion mixer; bandwidth 4.4 GHz; frequency 0.1 GHz; frequency 57 GHz to 64 GHz; frequency 60 GHz; gain 2 dB; gain 48.8 dB; loss -12.1 dB to 28.5 dB; loss -12.3 dB; power 8.83 mW; size 90 nm; CMOS integrated circuits; Frequency measurement; Impedance matching; Loss measurement; Mixers; Radio frequency; Resistance; 60 GHz; CMOS; Marchand balun; current injection; negative resistance compensation; up-conversion mixer;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electromagnetic Compatibility (EMC), 2013 IEEE International Symposium on
  • Conference_Location
    Denver, CO
  • ISSN
    2158-110X
  • Print_ISBN
    978-1-4799-0408-2
  • Type

    conf

  • DOI
    10.1109/ISEMC.2013.6670389
  • Filename
    6670389