High frequency performance limits of nanointerconnects based on CVD-grown graphene films transferred on SiO2-substrate

Graphene films are grown by chemical vapour deposition on copper layer and then transferred onto a silicon substrate, coated with silicon dioxide. The topological characterization of the produced film is performed by atomic force microscopy, and the sheet resistance is measured by applying the four-probe test method. The equivalent single conductor model is then used in order to analyze the signal propagation along a nanointerconnect made with multilayer graphene over silicon dioxide, in a wide frequency range, up to 100 GHz. The comparison of the radio-frequency performances of the nanointerconnect, modeled by using either the measured value of effective resistivity or a theoretical estimation of the p.u.l. resistance, suggests that graphene films grown by chemical vapor deposition are more suitable for application as low frequency electrical interconnections in flexible electronics, than in high-speed integrated circuits.