DocumentCode :
646778
Title :
Impact of parasitic inductance on effectiveness of TVS diodes
Author :
Qian Huang ; Gang Feng
Author_Institution :
BlackBerry, Waterloo, ON, Canada
fYear :
2013
fDate :
5-9 Aug. 2013
Firstpage :
677
Lastpage :
681
Abstract :
TVS diodes are widely used in electronic devices to protect them from ESD damages. Parasitic inductance is an important factor which circuit designers should consider in TVS diode selection and PCB routing. In this paper, the effect of the parasitic inductance associated with interconnecting traces, bonding wires and leads of TVS diodes is investigated by circuit simulations and experiments. Design suggestions are proposed for effective in-circuit ESD protection.
Keywords :
electrostatic discharge; lead bonding; network routing; printed circuit design; semiconductor diodes; PCB routing; TVS diode selection; circuit simulations; effective in-circuit ESD protection; electrostatic discharge; parasitic inductance; transient voltage suppressor diodes; wires bonding; Electrostatic discharges; Generators; Inductance; Integrated circuit modeling; Semiconductor diodes; Voltage measurement; Wires;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electromagnetic Compatibility (EMC), 2013 IEEE International Symposium on
Conference_Location :
Denver, CO
ISSN :
2158-110X
Print_ISBN :
978-1-4799-0408-2
Type :
conf
DOI :
10.1109/ISEMC.2013.6670497
Filename :
6670497
Link To Document :
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