Title :
Numerical simulation of CIGS thin film solar cells using SCAPS-1D
Author :
Khoshsirat, Nima ; Md Yunus, Nurul Amziah
Author_Institution :
Dept. of Electr. & Electron. Eng., Univ. Putra Malaysia Serdang, Serdang, Malaysia
fDate :
May 30 2013-June 1 2013
Abstract :
The performance of copper indium gallium diselenide (CIGS) thin film solar cell has been numerically simulated with different buffer and absorber layers thickness. The cell structure based on CIGS compound semiconductor as the absorber layer, indium sulfide as a buffer layer, un-doped (i) and n-doped zinc oxide as a window layer has been simulated using the simulation program called SCAPS-1D. This study aimed to find the optimum thickness of buffer and absorber layer for a CIGS thin film solar cells with indium sulfide buffer layer. It is found that the optimum thickness of the buffer layer is from 40nm to 50nm and for the absorber layer is in the range of 2000nm to 3000nm.
Keywords :
numerical analysis; semiconductor thin films; solar cells; ternary semiconductors; CIGS compound semiconductor; CIGS thin film solar cells; CuInGa; SCAPS-1D; absorber layers thickness; buffer layers thickness; copper indium gallium diselenide performance; indium sulfide; indium sulfide buffer layer; numerical simulation; simulation oxide; simulation program; window layer; Buffer layers; Conferences; Current density; Photonic band gap; Photovoltaic cells; Radiative recombination; CIGS; Inder Terms; InxSy; SCAPS-1D Thin film solar cells;
Conference_Titel :
Sustainable Utilization and Development in Engineering and Technology (CSUDET), 2013 IEEE Conference on
Conference_Location :
Selangor
Print_ISBN :
978-1-4673-4689-4
DOI :
10.1109/CSUDET.2013.6670987
